With the deposition of germanium directly on silicon, there will be a thermally induced strain due to the difference in thermal expansion coefficients between the two materials. Most importantly, germanium is compatible with Complementary Metal Oxide Semiconductor (CMOS) manufacturing which allows for a low-cost, high-throughput device, and it does not require cooling, which many III-V devices do. Germanium offers many benefits over groups III-V materials when used for infrared detection. Received: Accepted: JPublished: June 27, 2018 This work is licensed under the Creative Commons Attribution International License (CC BY 4.0). 1State University of New York Polytechnic Institute, Albany, NY, USAĢMagnolia Optical Technologies Inc., Woburn, MA, USAģUS Army Night Vision & Electronic Sensors Directorate, Fort Belvoir, VA, USAĤUS Army Research Laboratory, Adelphi, MD, USAĬopyright © 2018 by authors and Scientific Research Publishing Inc.
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